| 摘要 |
<P>PROBLEM TO BE SOLVED: To produce polysilicon using plasma CVD under a state from atmospheric pressure to supercritical atmosphere. <P>SOLUTION: This production apparatus of polysilicon includes: electrodes to which high-frequency power is applied; a power supply part for supplying the high frequency power to the electrodes; and a reaction gas feeding part for feeding a reaction gas containing a silicon halide compound and an inert gas to the electrodes. The production apparatus of polysilicon is characterized in that the high frequency power is applied to the electrodes and silicon is deposited on surfaces of the electrodes by the reaction gas turned into plasma while electric field is generated between the electrodes. <P>COPYRIGHT: (C)2012,JPO&INPIT |
