发明名称 Mitigation of data corruption from back pattern and program disturb in a non-volatile memory device
摘要 A write algorithm is used to remove errors due to back pattern effects, cell-to-cell capacitive coupling, and program disturb in memory cells. Original data to be programmed is adjusted prior to an initial programming operation of the memory cells. The original data is then programmed into the memory cells in another programming operation. A read adjustment weight data value is associated with each series string of memory cells. The weight data value is used to compensate data read during an initial word line read. The weight data value is updated after each read and read adjustment such that the adjusted weight data value is used on the subsequent read operations.
申请公布号 US8274833(B2) 申请公布日期 2012.09.25
申请号 US201213354453 申请日期 2012.01.20
申请人 SARIN VISHAL;HOEI JUNG-SHENG;ROOHPARVAR FRANKIE F.;MICRON TECHNOLOGY, INC. 发明人 SARIN VISHAL;HOEI JUNG-SHENG;ROOHPARVAR FRANKIE F.
分类号 G11C16/04 主分类号 G11C16/04
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