发明名称 |
Memristive negative differential resistance device |
摘要 |
A memristive Negative Differential Resistance (NDR) device includes a first electrode adjacent to a memristive matrix, the memristive matrix including an intrinsic semiconducting region and a highly doped secondary region, a Metal-Insulator-Transition (MIT) material in series with the memristive matrix, and a second electrode adjacent to the MIT material. |
申请公布号 |
US8274813(B2) |
申请公布日期 |
2012.09.25 |
申请号 |
US20100837903 |
申请日期 |
2010.07.16 |
申请人 |
PICKETT MATTHEW D.;BORGHETTI JULIEN;RIBEIRO GILBERTO MEDEIROS;HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
PICKETT MATTHEW D.;BORGHETTI JULIEN;RIBEIRO GILBERTO MEDEIROS |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|