发明名称 Memristive negative differential resistance device
摘要 A memristive Negative Differential Resistance (NDR) device includes a first electrode adjacent to a memristive matrix, the memristive matrix including an intrinsic semiconducting region and a highly doped secondary region, a Metal-Insulator-Transition (MIT) material in series with the memristive matrix, and a second electrode adjacent to the MIT material.
申请公布号 US8274813(B2) 申请公布日期 2012.09.25
申请号 US20100837903 申请日期 2010.07.16
申请人 PICKETT MATTHEW D.;BORGHETTI JULIEN;RIBEIRO GILBERTO MEDEIROS;HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. 发明人 PICKETT MATTHEW D.;BORGHETTI JULIEN;RIBEIRO GILBERTO MEDEIROS
分类号 G11C11/00 主分类号 G11C11/00
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