| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element that can achieve high luminance and to provide a method of manufacturing the same. <P>SOLUTION: A semiconductor light-emitting element comprises a structure, a first electrode layer, an electrode layer, and an inorganic film. The structure has a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer. The electrode layer is provided on the second semiconductor layer side of the structure. The electrode layer has a metal portion and a plurality of openings. The metal portion has a thickness ranging from 10 nm or more to 100 nm or less along the direction toward the second semiconductor layer from the first semiconductor layer. The openings penetrate through the metal portion along the direction and have a circle-equivalent diameter ranging from 10 nm or more to 5 μm or less. The inorganic film has a thickness ranging from 20 nm or more to 200 nm or less along the direction, is provided so as to cover a surface of the metal portion and the inner surfaces of the openings, and has permeability to light emitted from the light-emitting layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
