| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce reverse leakage current in a Schottky barrier diode. <P>SOLUTION: A semiconductor device comprises: a laminate 6 having a heterojunction 5a, 5b formed from alternately laminating GaN films 3a, 3b and barrier films 4a, 4b, which have forbidden bandwidths different from each other, one on top of another; a first electrode 8 Schottky connected with one sidewall of the laminate 6; and a second electrode 10 formed to contact another sidewall. An oxide film 12 is provided between the first electrode 8 and the barrier films 4a, 4b. Accordingly, reverse leakage current is prevented from flowing via a defect remaining in the barrier films 4a, 4b caused by fabrication of the barrier films 4a, 4b. <P>COPYRIGHT: (C)2012,JPO&INPIT |
