| 摘要 |
<p>PURPOSE: Methods and apparatus for calculating electromagnetic scattering properties of a structure and for reconstructing approximate structures are provided to rapidly perform accurate calculations of electromagnetic scattering properties in the field of semiconductor processing. CONSTITUTION: A substrate(802) is located in the lower part of a medium stacked in the z direction. Other layers(804,806) are located on the substrate. A two dimensional lattice(808) periodic in x and y directions is placed on the top of the stacked medium. An incident field(812) generates a reflected field(814) by interacting with a structure. The incident field includes materials of different properties to cause a discontinuity of an electromagnetic field.</p> |
