发明名称 |
POWER SEMICONDUCTOR DEVICE |
摘要 |
<p>PURPOSE: A power semiconductor device is provided to easily remove a resistance element of an electric field limit ring by physically and electrically separating the electric field limit ring from a well region by a gate region formed in a trench. CONSTITUTION: A second conductive type second semiconductor region(120) is formed on a first semiconductor region(110). A plurality of gate regions(130) are formed on the preset region of the first semiconductor region via the second semiconductor region. A first conductive type third semiconductor region(140) is formed on the outer upper side of the gate region in the second semiconductor region. A common gate line(133) is formed on the semiconductor substrate. A gate electrode(135) is electrically connected to the common gate line.</p> |
申请公布号 |
KR20120108681(A) |
申请公布日期 |
2012.10.05 |
申请号 |
KR20110026873 |
申请日期 |
2011.03.25 |
申请人 |
KEC CORPORATION |
发明人 |
KIM, WON CHAN;SONG, IN HYUK |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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