发明名称 Combined EEPROM/flash non-volatile memory circuit
摘要 A non-volatile memory circuit includes memory rows and supporting circuits coupled to the memory rows, where at least one of the memory rows include at least one Electrically Erasable Programmable Read-Only Memory (EEPROM) memory element and at least one Flash memory element. The EEPROM and Flash elements are configured to share some of the supporting circuits and can be accessed in parallel.
申请公布号 US8284608(B2) 申请公布日期 2012.10.09
申请号 US20100898183 申请日期 2010.10.05
申请人 OSTERTUN SOENKE;GARBE CHRISTOPH HANS JOACHIM;NENTWIG ANDREAS;SANDERSFELD NILS;NXP B.V. 发明人 OSTERTUN SOENKE;GARBE CHRISTOPH HANS JOACHIM;NENTWIG ANDREAS;SANDERSFELD NILS
分类号 G11C11/34 主分类号 G11C11/34
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