发明名称 |
Dopant implanting method and doping apparatus |
摘要 |
A dopant device includes: a dopant holder that holds Ge which is solid at normal temperature and liquefies the Ge near a surface of the semiconductor melt, the dopant holder including a communicating hole for delivering the liquefied Ge downwardly; a cover portion for covering the Ge held by the dopant holder; and a vent provided on the cover portion for communicating with the outside. A dopant injecting method is carried out using such a dopant device, the dopant injecting method including: loading Ge dopant in a solid state into the doping device; liquefying the solid Ge dopant loaded into the doping device while holding the doping device at a predetermined height from a surface of a semiconductor melt; and doping the semiconductor melt with the liquefied Ge that is flowed from the communicating hole. |
申请公布号 |
US8283241(B2) |
申请公布日期 |
2012.10.09 |
申请号 |
US20080600885 |
申请日期 |
2008.05.23 |
申请人 |
NARUSHIMA YASUHITO;KAWAZOE SHINICHI;OGAWA FUKUO;KUBOTA TOSHIMICHI;SUMCO TECHXIV CORPORATION |
发明人 |
NARUSHIMA YASUHITO;KAWAZOE SHINICHI;OGAWA FUKUO;KUBOTA TOSHIMICHI |
分类号 |
H01L21/04 |
主分类号 |
H01L21/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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