| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a memory element and a memory device which have improved writing/erasing characteristics in a low-voltage/low-current operation. <P>SOLUTION: In a memory element 1, a lower electrode 10, a memory layer 20, and an upper electrode 30 are laminated in this order. In the memory layer 20, an ion source layer 21, an intermediate layer 23, and a variable resistance layer 24 are laminated, and a barrier layer 22 containing a transition metal or a nitride thereof is provided between the ion source layer 21 and the intermediate layer 23 or between the intermediate layer and the variable resistance layer. Therefore, generation of an oxide film due to diffusion of metal ions from the ion source layer 21 is suppressed to suppress an increase in a resistance value. <P>COPYRIGHT: (C)2013,JPO&INPIT |
