发明名称 INERTIAL SENSOR
摘要 <P>PROBLEM TO BE SOLVED: To provide an inertial sensor that can properly evaluate a symmetric circuit and is easily miniaturized. <P>SOLUTION: A gyro sensor 1 (an example of an inertial sensor) includes a signal processing IC 10 and a sensor element 20. At least one of a plurality of rearrangement wirings 30 provided facing a first surface 11A of a semiconductor substrate 11 of the signal processing IC electrically connects electrodes formed on the semiconductor substrate and electrodes formed on the sensor element. There are further formed QV amplifiers 110, 120 (examples of a first and a second circuits) respectively generating a first and a second signal having a symmetric property, wirings 112, 122 (examples of a first and a second wirings), and a pad 70-1 (an example of a first electrode), 70-n (an example of a second electrode) to which the first and second signal are supplied via the wirings 112, 122, on the first surface of the semiconductor substrate. A form of the wiring 112 and a form of the wiring 122 have a symmetric property, in a planar view viewed from a direction orthogonal to the first surface of the semiconductor substrate. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012198099(A) 申请公布日期 2012.10.18
申请号 JP20110062279 申请日期 2011.03.22
申请人 SEIKO EPSON CORP 发明人 KOMATSU FUMIKAZU;II MASAKI
分类号 G01C19/56;H01L41/09;H01L41/18;H01L41/187 主分类号 G01C19/56
代理机构 代理人
主权项
地址