| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor integrated device with reduced temperature unevenness in surfaces of semiconductor chips. <P>SOLUTION: A semiconductor integrated device 10 is a semiconductor chip stack in which a plurality of semiconductor chips 11, 12, 13, and 14 are stacked. The first semiconductor chip 11 has first regions 21a and 21b whose temperatures are higher than those of their circumferences by heat generation during operation. The second semiconductor chip 12 has through vias 32a and 32b formed corresponding to the first regions 21a and 21b. Connection conductors 41a and 41b are formed on the first regions 21a and 21b of the first semiconductor chip 11, and connect the first semiconductor chip 11 and the second semiconductor chip 12 so that the peak temperatures in the through vias 32a and 32b and the first regions 21a and 21b are overlapped. <P>COPYRIGHT: (C)2013,JPO&INPIT |
