| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of compound semiconductor laminates for a quantum type infrared sensor using a p-type dopant having a high activation rate and low toxicity and facilitating a control. <P>SOLUTION: The compound semiconductor laminate for manufacturing a quantum type infrared sensor according to the present invention is a laminate formed by sequentially superposing an n-type contact layer, a light absorption layer, a p-type barrier layer and a p-type contact layer on a substrate. The light absorption layer includes a superlattice structure formed by periodically superposing a non-doped InSb and one type selected from a group consisting of GaSb, AlSb, and AlGaSb that are doped with Si as the p-type dopant. <P>COPYRIGHT: (C)2013,JPO&INPIT |
