| 摘要 |
<p>Disclosed herein is a nitride based semiconductor device. There is provided a nitride based semiconductor device according to the exemplary embodiment of the present invention including: a base substrate, an epitaxial growth layer disposed on the base substrate and generating 2-dimensional electron gas (2DEG) therein, and an electrode structure disposed on the epitaxial growth layer and having an extension extending into the epitaxial growth layer to contact the 2-dimensional electron gas.</p> |
