| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an arc ion plating apparatus and a film deposition method, which can reduce the change of smoothness of the surface of a thin film and the change of residual stress of a thin film, which occur with the consumption of an evaporation source, and can improve the utilization efficiency of the evaporation source. <P>SOLUTION: The direction of polarity of a ring-shaped magnet and a solenoid coil is set to the same direction; the direction of polarity of a center magnet is set opposite to the direction of the ring-shaped magnet and the solenoid coil; the initial setting values of the magnetic field produced on the surface of the evaporation source by the center magnet, the ring-shaped magnet and the solenoid coil are set such that the magnetic flux density on the surface of an inner area excluding an end area having a predetermined width in the inner direction from an end face of the evaporation source is 7 to 15 mT, and the magnetic flux density on the surface of the end area is larger by 3 mT or more than the magnetic flux density on the surface of the inner area; and the solenoid coil is provided with a coil power, a magnetic field measurement device, and a coil current control mechanism for changing the current value passed through the solenoid coil with the consumption of the evaporation source and holding the initial setting values. <P>COPYRIGHT: (C)2013,JPO&INPIT |
