| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for refreshing a memory device, a refresh address generator and a memory device. <P>SOLUTION: A refresh address is generated in a refresh cycle such that refresh leveraging is used to refresh a memory device. When the refresh address is at a second address, refresh to a weak cell having a first address in place of a first strong cell having the second address is executed. When the refresh address is at a third address, refresh to one strong cell is executed between the first strong cell and the second strong cell having the third address. Address information to only one address is stored among the first, second and third addresses so as to reduce memory capacity. In another embodiment, when the refresh address is at at least one predetermined address, refresh to one among the weak cell, the first strong cell and the second strong cell is executed by a flag so as to execute the refresh leveraging. <P>COPYRIGHT: (C)2013,JPO&INPIT |
