| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin film transistor for a liquid crystal display device comprising a gate insulation layer in which leakage current of the thin film transistor is reduced simultaneously while forming the gate insulation layer with high dielectric constant insulating material to obtain high potential mobility. <P>SOLUTION: A thin film transistor for a liquid crystal display device comprises: a gate electrode 11 formed on a substrate; a gate insulation film 12 formed of a high dielectric constant insulating material having structure in which functional group, metal oxide (Me), silicon (Si) and oxygen (O) are bonded on the gate electrode 11; and a source electrode 16a and a drain electrode 16b formed on the gate insulation film 12. <P>COPYRIGHT: (C)2013,JPO&INPIT |
