| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a reliable memory element that has resistance against external radiation, and stably operates without causing erroneous operation. <P>SOLUTION: The memory element includes a memory layer that retains information by a magnetization state of a magnetic body, a magnetization fixed layer having the magnetization serving as a reference for information stored in the memory layer, and an intermediate layer comprising a non-magnetic body and arranged between the memory layer and the magnetization fixed layer. The information is stored by inverting the magnetization of the memory layer by utilizing spin torque magnetization inversion generated by a current flowing in a lamination direction of a layer structure having the memory layer, the intermediate layer, and the magnetization fixed layer. The memory layer includes a ferromagnetic layer containing B, and an isotope ratio of 10B contained in the B is smaller than 19.9% which is observed in the nature. <P>COPYRIGHT: (C)2013,JPO&INPIT |
