| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can uniformly form a trench. <P>SOLUTION: A semiconductor device manufacturing method according to an embodiment comprises: a process of forming, on a processing target substrate including a first part composed of a first material and a second part composed of a second material different from the first material, a mask film which includes a third part arranged directly above the first part and composed of a third material and a fourth part arranged directly above the second part and composed of a fourth material different from the third material, in which openings are formed on both of the third part and the fourth part; and a process of selectively removing the first part and the second part by performing etching by using the mask film as a mask under a condition that an etching rate of the fourth material is higher than an etching rate of the third material and an etching rate of the first material is higher than an etching rate of the second material. <P>COPYRIGHT: (C)2013,JPO&INPIT |
