| 摘要 |
<P>PROBLEM TO BE SOLVED: To equally turns on parasitic bipolar transistors in finger portions of finger-form source and drain electrodes when a surge voltage is applied, even with a P+ type contact layer surrounding N+ type source layers and N+ type drain layers connected to the finger-form source and drain electrodes. <P>SOLUTION: A P+ type contact layer 10 is formed to surround N+ type source layers 9 and N+ type drain layers 8 which extend parallelly to each other. Metal silicide layers 9a, 8a, and 10a are respectively formed on the N+ type source layers 9, the N+ type drain layers 8, and the P+ type contact layer 10 extending perpendicularly to the direction in which the N+ type source layers 9 extend. Finger-form source electrodes 15, finger-form drain electrodes 16, and a P+ type contact electrode 17 surrounding these finger-form electrodes are formed, being connected to the metal silicide layers respectively through contact holes 14 formed in an interlayer insulation film 13 deposited on the metal silicide layers 9a, 8a, and 10a. <P>COPYRIGHT: (C)2013,JPO&INPIT |
