| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the power consumption of a semiconductor memory by minimizing the capacity for generating a power supply voltage in a voltage generation part while preventing variation of the power supply voltage. <P>SOLUTION: A first voltage generation part generates a first power supply voltage that is to be supplied to a first selection part which selects a first signal line that is to be connected to a memory cell. A second voltage generation part generates a second power supply voltage, which is to be supplied to a second selection part that operates after the first selection part starts operating, during the activation of a start signal so as to select a second signal line that is to be connected to the memory cell. A switch short-circuits the first power supply line and the second power supply line during the activation of a short-circuit signal. A first control part activates the start signal in response to an access request, and deactivates the start signal in response to the deactivation of the short-circuit signal. A second control part activates the short-circuit signal after a predetermined time period has elapsed from the activation of the start signal, and deactivates the short-circuit signal after an access operation based on the access request is complete. <P>COPYRIGHT: (C)2013,JPO&INPIT |
