LIGHT EMITTING DEVICE HAVING IMPROVED LIGHT EXTRACTION EFFICIEDNCY AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A light emitting device with improved light extraction efficiency and a manufacturing method thereof are provided to improve an electrostatic voltage by implanting particle ions to a p type nitride semiconductor layer to form a current blocking layer. CONSTITUTION: A light emitting structure(110) is arranged on a substrate and includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. A first electrode(130) is arranged on the first conductive semiconductor layer. A second electrode(132) is arranged on the second conductive semiconductor layer. A current blocking region is composed of an impurity ion implantation layer.