| 摘要 |
PURPOSE: A rotary semiconducting target and a sputtering method thereof are provided to reduce energy consumption as sputtering pressure does not need to be induced again. CONSTITUTION: A pipe shaped member(11) with a horizontal length forms an outer surface. First and second horizontal brackets are extended along the length of the pipe shaped member. A first target(12) comprises a first sputtering material, and forms a first sputtering surface and a first rear surface. The first rear surface faces the first sputtering surface, and the outer surface of the pipe shaped member. The first target is placed between the first and second horizontal brackets, and the first rear surface of the first target is in contact with the outer surface of the pipe shaped member but not connected.
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