发明名称 METHOD FOR FORMING SEMICONDUCTOR DEVICE
摘要 A method for fabricating a semiconductor device includes: providing a substrate, forming an insulation layer, an adhesive layer, and a photoresist pattern, etching the adhesive layer using the photoresist pattern as an etch barrier, and wet etching the insulation layer using the etched adhesive layer and the photoresist pattern as etch barriers.
申请公布号 KR101224140(B1) 申请公布日期 2013.01.18
申请号 KR20090134229 申请日期 2009.12.30
申请人 发明人
分类号 H01L21/027 主分类号 H01L21/027
代理机构 代理人
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