| 摘要 |
Methods for manufacturing a thin film transistor and a thin film transistor array substrate are provided to reduce a manufacturing cost by performing a MIC(Metal Induced Crystallization) process using a liquid silicon material. A buffer layer(116) is formed on a substrate(101). A polysilicon type active pattern(114) is formed on the buffer layer. A gate insulating layer is formed to cover the polysilicon type active pattern. A gate electrode is positioned on the gate insulating layer in order to be overlapped with a channel region of a polysilicon type active layer. An interlayer dielectric is formed on the gate insulating layer. A source electrode and a drain electrode are formed to contact with the polysilicon type active pattern through the interlayer dielectric and the gate insulating layer. The process for forming the polysilicon type active pattern includes a process for crystallizing amorphous silicon as polysilicon. |
