| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide systems and methods for positioning a film for interaction with a laser shaped as a line beam and for controlling parameters of the shaped line beam, for example, to melt an amorphous silicon film, for example, to crystallize the film for the purpose of manufacturing thin film transistors (TFTs). <P>SOLUTION: A laser crystallization apparatus and method are provided for selectively melting a film such as amorphous silicon that is deposited on a substrate. The apparatus may comprise an optical system for producing stretched laser pulses for use in melting the film. In another aspect of an embodiment of the present invention, a system and a method are provided for stretching a laser pulse. In further another aspect, a system is provided for maintaining a divergence of a pulsed laser beam (stretched or non-stretched) at a location along a beam path within a predetermined range. <P>COPYRIGHT: (C)2013,JPO&INPIT |
