发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR SUBSTRATE PRODUCT AND THIN FILM REMOVER USED FOR THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor substrate product capable of removing a thin film of a platinum (Pt) compound without excessively oxidizing and corroding other members, and a thin film remover used for the same. <P>SOLUTION: A manufacturing method of a semiconductor substrate product includes the steps of: preparing a semiconductor substrate having a thin film of a platinum compound; preparing a thin film remover; and removing the thin film of the platinum compound by applying the thin film remover to the semiconductor substrate. The thin film remover contains a combination of halogen molecules, halogen ions, and water. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013021065(A) 申请公布日期 2013.01.31
申请号 JP20110151950 申请日期 2011.07.08
申请人 FUJIFILM CORP 发明人 INABA TADASHI;MIZUTANI ATSUSHI;TAKAHASHI KAZUYOSHI
分类号 H01L21/308;C23F1/30;H01L21/28;H01L21/306;H01L21/336;H01L29/78 主分类号 H01L21/308
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