| 发明名称 |
DEEP-ULTRAVIOLET LIGHT-EMITTING DIODE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the efficiency of a top-emitting deep-ultraviolet light-emitting diode and to provide a high-efficiency and inexpensive ultraviolet light-emitting diode. <P>SOLUTION: A p-type electrode 7 is mainly composed of Ag and the thickness of the p-type electrode 7 is set to be 6 nm. The emission wavelength of a light-emitting layer 4 is adjusted to be 320 ± 5 nm. A nitride semiconductor layer such as InAlGaN or an oxide semiconductor layer such as MgZnO is used as the light-emitting layer 4. <P>COPYRIGHT: (C)2013,JPO&INPIT |
| 申请公布号 |
JP2013021059(A) |
申请公布日期 |
2013.01.31 |
| 申请号 |
JP20110151833 |
申请日期 |
2011.07.08 |
| 申请人 |
PANASONIC CORP |
发明人 |
SAKAI MASAHIRO;YANAGAWA HIROTO |
| 分类号 |
H01L33/40;H01L33/32;H01L33/34 |
主分类号 |
H01L33/40 |
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