发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND PROCESSING DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, along with a processing device, capable of keeping a removable performance of chemical liquid at a high level. <P>SOLUTION: An insulating film 2 is dry-etched using a resist pattern 3 as a mask, to form an opening 4. Ultraviolet ray whose wavelength is 200 nm or less is radiated to a reactive product 5 that sticks to an inner surface of the opening 4 at the time of dry-etching with the insulating film 2, so that an organic component contained in the reactive product 5 is discomposed. Using a chemical liquid, a sticking substance 6 remaining on the inner surface of the opening 4 is removed after decomposition of the organic component. In the opening 4 where the sticking substance 6 has been removed, a conductive film 7 is formed. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013030625(A) 申请公布日期 2013.02.07
申请号 JP20110165762 申请日期 2011.07.28
申请人 FUJITSU SEMICONDUCTOR LTD 发明人 SUZUKI TAMOTSU
分类号 H01L21/302;H01L21/28;H01L21/304;H01L21/306;H01L21/768 主分类号 H01L21/302
代理机构 代理人
主权项
地址