SOLID STATE IMAGING DEVICE MANUFACTURING METHOD, SOLID STATE IMAGING ELEMENT AND ELECTRONIC APPARATUS

摘要

PROBLEM TO BE SOLVED: To achieve high reliability and reproducibility at low cost without damaging a semiconductor substrate when forming a fine convexoconcave structure for each pixel for antireflection of incident light.

SOLUTION: A solid state imaging element manufacturing method comprises: a first step of forming a protection film having an etching selection ratio to a monocrystalline semiconductor substrate on a surface of the semiconductor substrate; a second step of forming a resist pattern of dots arranged with a predetermined pitch on the protection film; a third step of selectively removing the protection film by wet etching using the resist pattern formed in the second step as a mask; a fourth step of forming a structure of convexoconcave arranged with a predetermined pitch on the surface of the semiconductor substrate by etching the semiconductor substrate by wet etching using as a mask the protection film remaining after selectively removed in the third step; and a fifth step of removing the protection film remaining on the semiconductor substrate after forming the structure of convexoconcave in the fourth step.

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