NITRIDE-BASED LIGHT-EMITTING DIODE ELEMENT AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a nitride-based LED element which can be manufactured at low cost by using a c-GaN substrate including a defect aggregation region.

SOLUTION: A nitride-based light-emitting diode element comprises: a nitride semiconductor film epitaxially grown on a c-GaN substrate partially including a defect aggregation region; a mesa including an n-type layer, a luminescent layer and a p-type layer in this order from the c-GaN substrate side and formed on the nitride semiconductor film; a flatness deterioration region formed due to an influence of the defect aggregation region on a surface of the nitride semiconductor film and included in a top face of the mesa; and an electrode formed on the mesa so as to cover at least a part of the flatness deterioration region.

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