发明名称 |
ANISOTROPIC WET ETCHING METHOD AND APPARATUS |
摘要 |
PURPOSE: An anisotropic wet etching method and apparatus thereof are provided to save a material by reusing etchant and substrate particles. CONSTITUTION: A photoresist pattern is formed on a substrate. Micro holes are formed in the aperture region of the substrate. An etching injection system spreads etchant to the substrate. The etchant passes through the micro holes. A recovery vessel(TNK) collects the etchant. |
申请公布号 |
KR101244425(B1) |
申请公布日期 |
2013.03.18 |
申请号 |
KR20110120641 |
申请日期 |
2011.11.18 |
申请人 |
SNDISPLAY |
发明人 |
LEE, CHOON RAE;KIM, HAK UNG |
分类号 |
H01L21/3065;G03F7/26 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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