发明名称 ANISOTROPIC WET ETCHING METHOD AND APPARATUS
摘要 PURPOSE: An anisotropic wet etching method and apparatus thereof are provided to save a material by reusing etchant and substrate particles. CONSTITUTION: A photoresist pattern is formed on a substrate. Micro holes are formed in the aperture region of the substrate. An etching injection system spreads etchant to the substrate. The etchant passes through the micro holes. A recovery vessel(TNK) collects the etchant.
申请公布号 KR101244425(B1) 申请公布日期 2013.03.18
申请号 KR20110120641 申请日期 2011.11.18
申请人 SNDISPLAY 发明人 LEE, CHOON RAE;KIM, HAK UNG
分类号 H01L21/3065;G03F7/26 主分类号 H01L21/3065
代理机构 代理人
主权项
地址