发明名称 APPARATUS FOR CHEMICAL VAPOR DEPOSITION AND METHOD FOR CHEMICAL VAPOR DEPOSITION USING THE SAME
摘要 <p>PURPOSE: A CVD(Chemical Vapor Deposition) apparatus and a CVD(Chemical Vapor Deposition) method using the same are provided to prevent or diminish damages or the degradation of components because the same portion is not heated due to a circulating direction of cooling water being changed. CONSTITUTION: A CVD(Chemical Vapor Deposition) apparatus comprises a chamber, a susceptor, a gas spraying unit(30), a coolant circulation unit(40), and a control unit(60). The susceptor is installed in the inside of the chamber and a wafer is loaded on the susceptor. The gas spraying unit sprays a process gas toward the wafer. Coolant passes through the inside of a cooling flow path of the gas spraying unit. The coolant circulation unit circulates the coolant through the cooling flow path so that the gas spraying unit is cooled. The coolant circulation unit converts a coolant flow direction in a first direction or a second direction opposite to the first direction. If a set condition is satisfied with, the control unit controls the coolant circulation unit to convert the coolant flow direction.</p>
申请公布号 KR101244242(B1) 申请公布日期 2013.03.18
申请号 KR20110002660 申请日期 2011.01.11
申请人 发明人
分类号 C23C16/44;C23C16/455;H01L21/205 主分类号 C23C16/44
代理机构 代理人
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