ITO FOR TRANSPARENT ELECTRODE AND METHOD FOR THE SAME

摘要

PURPOSE: An ITO for a transparent electrode and a method for manufacturing the same are provided to secure excellent surface roughness by reducing plasma damage on a GaN epi layer. CONSTITUTION: An ITO(Indium Tin Oxide) layer(130) is formed on an epi layer(120). The ITO layer includes a first area(132), a second area(134), and an interface(136). The interface separates the first area from the second area. The first area touches the epi layer. The second area is formed on the first area.