发明名称 |
Method for fabricating an isolation structure |
摘要 |
The invention relates to integrated circuit fabrication, and more particularly to an electronic device with an isolation structure made having almost no void. An exemplary method for fabricating an isolation structure, comprising: providing a substrate; forming a trench in the substrate; partially filling the trench with a first silicon oxide; exposing a surface of the first silicon oxide to a vapor mixture comprising NH3 and a fluorine-containing compound; heating the substrate to a temperature between 100° C. to 200° C.; and filling the trench with a second silicon oxide, whereby the isolation structure made has almost no void.
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申请公布号 |
US8404561(B2) |
申请公布日期 |
2013.03.26 |
申请号 |
US20100774219 |
申请日期 |
2010.05.05 |
申请人 |
LEE TZE-LIANG;JENG PEI-REN;FU CHU-YUN;CHERN CHYI SHYUAN;HUANG JUI-HEI;PENG CHIH-TANG;LIEN HAO-MING;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LEE TZE-LIANG;JENG PEI-REN;FU CHU-YUN;CHERN CHYI SHYUAN;HUANG JUI-HEI;PENG CHIH-TANG;LIEN HAO-MING |
分类号 |
H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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