METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a novel method for manufacturing a semiconductor device, which is applicable to the formation of an electrode penetrating a substrate.

SOLUTION: The method for manufacturing a semiconductor device comprises the steps of: forming a semiconductor element on a semiconductor substrate; forming a hole in the semiconductor substrate; forming an insulating film so as to cover an upper part of the semiconductor element and an inner wall and the bottom of the hole; removing the insulating film on the upper part of the semiconductor element and the bottom of the hole by anisotropic etching; forming a metal diffusion preventing film on the bottom of the hole; and burying a conductive film in the hole.

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