| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a washing device and a washing method of a semiconductor wafer capable of reducing an epitaxial defect on the surface, when forming an epitaxial layer on the semiconductor wafer after cleaning. <P>SOLUTION: The washing device of a semiconductor wafer includes a reaction processing tank 10 in which a plurality of semiconductor wafers 1 are housed while being arranged in the X direction in standing state at predetermined intervals, and a gas supply port 11 provided in the bottom face of the reaction processing tank 10 and supplying hydrogen fluoride gas to the reaction processing tank 10. The gas supply port 11 has a filter 12 which removes mist components contained in the hydrogen fluoride gas. Since the semiconductor wafers 1 are washed by the hydrogen fluoride gas from which the mist components are removed by the filter 12, epitaxial defect on the surface can be reduced when an epitaxial layer is formed on the semiconductor wafer 1 after cleaning. <P>COPYRIGHT: (C)2013,JPO&INPIT |
