发明名称 |
Non-volatile variable capacitive device including resistive memory cell |
摘要 |
A non-volatile variable capacitive device includes a capacitor defined over a substrate, the capacitor having an upper electrode and a resistive memory cell having a first electrode, a second electrode, and a switching layer provided between the first and second electrodes. The resistive memory cell is configured to be placed in a plurality of resistive states according to an electrical signal received. The upper electrode of the capacitive device is coupled to the second electrode of the resistive memory cell. The resistive memory cell is a two-terminal device.
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申请公布号 |
US8411485(B2) |
申请公布日期 |
2013.04.02 |
申请号 |
US20100815318 |
申请日期 |
2010.06.14 |
申请人 |
NAZARIAN HAGOP;JO SUNG HYUN;CROSSBAR, INC. |
发明人 |
NAZARIAN HAGOP;JO SUNG HYUN |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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