| 发明名称 |
SURFACE TREATMENT METHOD OF m-SURFACE GaN SUBSTRATE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a surface treatment method of an m-surface GaN substrate. <P>SOLUTION: A surface treatment method of an m-surface GaN substrate includes: a first step of polishing a surface of the m-surface GaN substrate at a polishing rate of 0.5 μm/h or lower using an acid CMP slurry; and a second step of washing the surface of the m-surface GaN substrate following the first step. <P>COPYRIGHT: (C)2013,JPO&INPIT |
| 申请公布号 |
JP2013062542(A) |
申请公布日期 |
2013.04.04 |
| 申请号 |
JP20120281719 |
申请日期 |
2012.12.25 |
| 申请人 |
MITSUBISHI CHEMICALS CORP |
发明人 |
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| 分类号 |
H01L21/304;H01L33/16;H01L33/32 |
主分类号 |
H01L21/304 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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