| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve voltage characteristics of a static random access memory cell by a simpler method. <P>SOLUTION: In the static random access memory cell, a voltage difference between a supply voltage application point and one bit line is set at a voltage difference V1h greater than a normal voltage difference V1, and a voltage difference between a word line and the one bit line is set at a voltage difference Vwd slightly greater than a threshold voltage of a pass gate transistor, so that electrons are injected into an insulating layer near one connected to an output terminal of an inverter constituting the memory cell of diffusion layers functioning as the source and drain of the pass gate transistor connected to the one bit line (Step S110). This can improve voltage characteristics of the memory cell by a simpler method. <P>COPYRIGHT: (C)2013,JPO&INPIT |
