发明名称 PHOTORESIST COMPOSITION AND METHOD FOR PRODUCING THE SAME, AND METHOD FOR FORMING RESIST PATTERN
摘要 <p>PURPOSE: A photoresist composite which is capable of preventing development defect, a method of the same and a method of forming resist pattern are provided to have hydrophobicity and form resist film which is high in hydrophobicity. CONSTITUTION: A photoresist composite comprises a fluorine element containing polymer[A]with a structure unit(I) comprising hydrophilicity, a fluorine element containing polymer[B]with a structure unit(II) comprising an alkali releasing property and polymer comprising acid releasing property[C]. The polymer[A],[B]and[C]are different polymer. The structure unit (I) is indicated as structure formula 1. The structure unit (II) is indicated as structure formula 2. In the structure unit, R1 or R4 is a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group. R2 is a hydrocarbon group or hydro carbon radical (m+1) of which carbon number is 1-20. R3 or R6 is a single bond, a hydrocarbon group radical of which carbon number is 1-20 or a hydrocarbon group radical of which carbon number is 4-20. R5 is (n+1) hydrocarbon group of which number is 1-20. R7 is a hydrocarbon group of which number is 1-20. X is a single bond, -CO-O-* and -O-. X is a single bond, -CO-O-* and -O-.</p>
申请公布号 KR20130034616(A) 申请公布日期 2013.04.05
申请号 KR20120107742 申请日期 2012.09.27
申请人 JSR CORPORATION 发明人 SERIZAWA RYUICHI;ASANO YUSUKE
分类号 G03F7/004;G03F7/26 主分类号 G03F7/004
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