| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin film transistor which can easily achieve performance improvement. <P>SOLUTION: A thin film transistor comprises: a gate electrode; a semiconductor layer isolated from the gate electrode via a separation insulation layer; and a source electrode and a drain electrode which are connected to the semiconductor layer and isolated from each other. Between the source electrode and the drain electrode, a thickness of the separation insulation layer in a first region where the gate electrode does not overlap the source electrode and the drain electrode is smaller than a thickness of the separation insulation layer in a second region where the gate electrode overlaps at least one of the source electrode and the drain electrode. <P>COPYRIGHT: (C)2013,JPO&INPIT |
