| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device having a storage area which is not rewritable. <P>SOLUTION: A nonvolatile memory device comprises: a plurality of first wiring disposed in parallel; a plurality of second wiring disposed in parallel crossing the first wiring; a memory cell array comprising a memory cell connected between the first wiring and the second wiring; and a security circuit which is connected to the prescribed memory cell in the memory cell array and makes writing to the prescribed memory cell non-reversibly impossible by a writing prohibiting operation. <P>COPYRIGHT: (C)2013,JPO&INPIT |
