| 摘要 |
<p>In a disclosed film deposition method, after a film deposition—alteration step is carried out that includes a film deposition process where a Si containing gas is adsorbed on a wafer W and the adsorbed Si containing gas on the wafer is oxidized by supplying an O3 gas to the upper surface of the wafer, thereby producing a silicon oxide layer(s) by rotating a turntable on which the wafer is placed, and an alteration process where the silicon oxide layer(s) is altered by plasma, an alteration step where the silicon oxide layer(s) is altered by plasma while the Si containing gas is not supplied.</p> |
