| 摘要 |
<p>The invention relates to a method of manufacturing a base substrate for the manufacture of a semi-conductor on insulator type substrate, comprising the following steps: (a) providing a silicon substrate (1) having an electrical resistivity above 500 Ohm.cm, (b) cleaning the surface of said substrate (1), so as to remove the native oxide and/or dopants present on the surface of said substrate (1), (c) forming, on said substrate (1), a layer (2) of dielectric material, (d) forming, on said layer (2), a layer (3) of poly-crystalline silicon, said method being characterised in that steps (b), (c) and (d) are implemented successively in a same enclosure (10).</p> |
