发明名称 GATE DRIVE METHOD OF SEMICONDUCTOR ELEMENT
摘要 <P>PROBLEM TO BE SOLVED: To improve the trade-off characteristics between noise and switching loss occurring at the time of turn-off switching. <P>SOLUTION: When the semiconductor element is turned off, until a voltage between a collector and an emitter of the semiconductor element reaches a DC voltage applied between the collector and the emitter, the change ratio of the voltage between the collector and the emitter is increased, whereas after the voltage between the collector and the emitter of the semiconductor element reaches the DC voltage, the change ratio of the voltage between the collector and the emitter is decreased. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013078258(A) 申请公布日期 2013.04.25
申请号 JP20120257649 申请日期 2012.11.26
申请人 FUJI ELECTRIC CO LTD 发明人
分类号 H02M1/08;H03K17/16;H03K17/56;H03K17/687 主分类号 H02M1/08
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