发明名称 |
RESISTIVE MEMORY AND METHODS OF PROCESSING RESISTIVE MEMORY |
摘要 |
Resistive memory and methods of processing resistive memory are described herein. One or more method embodiments of processing resistive memory include conformally forming a cell material in an opening in an interlayer dielectric such that a seam is formed in the cell material, forming a conductive pathway by modifying the seam, and forming an electrode on the cell material and the seam.
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申请公布号 |
US2013099189(A1) |
申请公布日期 |
2013.04.25 |
申请号 |
US201213691352 |
申请日期 |
2012.11.30 |
申请人 |
MICRON TECHNOLOGY, INC.;MICRON TECHNOLOGY, INC. |
发明人 |
SANDHU GURTEJ S.;SMYTHE, III JOHN A. |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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