发明名称 |
SEMICONDUCTOR STRUCTURE HAVING A THROUGH SUBSTRATE VIA (TSV) AND METHOD FOR FORMING |
摘要 |
A semiconductor device structure includes a substrate having a background doping of a first concentration and of a first conductivity type. A through substrate via (TSV) is through the substrate. A device has a first doped region of a second conductivity on a first side of the substrate. A second doped region is around the TSV. The second doped region has a doping of a second concentration greater than the first concentration and is of the first conductivity type.
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申请公布号 |
US2013099312(A1) |
申请公布日期 |
2013.04.25 |
申请号 |
US201113279776 |
申请日期 |
2011.10.24 |
申请人 |
DAO THUY B.;KEYS JOEL E.;RUEDA HERNAN A.;SANDERS PAUL W. |
发明人 |
DAO THUY B.;KEYS JOEL E.;RUEDA HERNAN A.;SANDERS PAUL W. |
分类号 |
H01L29/78;H01L21/225 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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