发明名称 SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of adjusting, with a simple configuration, a back gate voltage at the time of on of a MOS transistor connected between a power-supply line and a function circuit as a power-supply switch. <P>SOLUTION: A semiconductor device includes a pair of power-supply lines 2 and 3, function circuits 4a<SB POS="POST">0</SB>to 4a<SB POS="POST">n</SB>, and switching circuits 6a<SB POS="POST">0</SB>to 6a<SB POS="POST">n</SB>and 7a<SB POS="POST">0</SB>to 7a<SB POS="POST">n</SB>that are connected between at least one of the pair of power-supply lines 2 and 3 and the function circuits 4a<SB POS="POST">0</SB>to 4a<SB POS="POST">n</SB>. The switching circuits 6a<SB POS="POST">0</SB>to 6a<SB POS="POST">n</SB>and 7a<SB POS="POST">0</SB>to 7a<SB POS="POST">n</SB>have a first MOS transistor 11 in which one of a source and a drain is connected to the function circuits 4a<SB POS="POST">0</SB>to 4a<SB POS="POST">n</SB>and the other is connected to one of the pair of power-supply lines 2 and 3, resistive elements 12 and 21 that connect a gate and a back gate of the first MOS transistor 11, and a gate-voltage control circuit 13 that is connected to the gate of the first MOS transistor 11. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013080878(A) 申请公布日期 2013.05.02
申请号 JP20110221209 申请日期 2011.10.05
申请人 FUJITSU SEMICONDUCTOR LTD 发明人 HARADA AKIHIKO
分类号 H01L21/822;H01L27/04;H03K19/00 主分类号 H01L21/822
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