METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SUBSTRATE PROCESSING DEVICE

摘要

PROBLEM TO BE SOLVED: To improve throughput by making different gases flow alternately to form a film.

SOLUTION: A vertical semiconductor manufacturing device has: a reaction furnace 20; an air exhaustion pipe 40 connected with a vacuum pump 26; a first supply pipe 41 supplying a first gas contributed to film formation; a second supply pipe 38 supplying a second gas; valves 22-25 controlling the supply by the first and second supply pipes and the air exhaustion by the air exhaustion pipe 40; a gas storage 21 provided to the first supply pipe 41; and control means 29. By using the vertical semiconductor manufacturing device, the first gas is supplied to the furnace 20 in a state that the air exhaustion of the furnace 20 is stopped by the control means to pressurize the furnace 20 and thereby expose the substrate W to the first gas. The second gas is supplied to the furnace 20 via the second supply pipe 38 while performing the air exhaustion of the furnace 20 with the pump 26 to expose the substrate to the second gas.

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